| PART |
Description |
Maker |
| K4S281632D K4S281632D-L1H K4S281632D-L1L K4S281632 |
128Mb SDRAM, 3.3V, LVTTL, 133MHz
128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL
RF CONNECTOR; 1.6/5.6 PLUG, CRIMP ATTACHMENT FOR RG179 & RG187
; Current Rating:30mA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):No
128Mb SDRAM, 3.3V, LVTTL, 166MHz
128Mb SDRAM, 3.3V, LVTTL, 183MHz
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| HY57V641620HGT-6I HY57V641620HGT-7I HY57V641620HGT |
SDRAM - 64Mb
4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54
4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 5 ns, PDSO54
x16 SDRAM x16内存
4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 4.5 ns, PDSO54
CAP 0.01UF 50V 10% X7R SMD-0805 TR-13 PLATED-NI/SN
Ceramic Multilayer Capacitor; Capacitance:10000pF; Capacitance Tolerance: /- 10 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Package/Case:0805; Series:MLCC; Dielectric Material:Ceramic; Leaded Process Compatible:Yes
CAP SMD 0805 .01UF 50V 5%
CONNECTOR ACCESSORY
From old datasheet system
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
|
| K4M28163PH |
2M x 16Bit x 4 Banks Mobile SDRAM
|
Samsung semiconductor
|
| K4M641633K |
1M x 16Bit x 4 Banks Mobile SDRAM
|
Samsung semiconductor
|
| T436416C T436416C-6S T436416C-7S T436416C-7SG T436 |
4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM
|
TMT[Taiwan Memory Technology]
|
| K4S51163LF-YPC/L/F1L K4S51163LF-YPC/L/F75 |
8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| H5MS2562JFR-E3M H5MS2562JFR-J3M H5MS2562JFR-L3M |
Mobile DDR SDRAM 256Mbit (16M x 16bit)
|
Hynix Semiconductor
|
| T431616D T431616E |
(T431616D/E) 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
|
TMT
|
| K4S561632A K4S561632A-TC_L1H K4S561632A-TC_L1L K4S |
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| T431616D-7SG T431616D-7C T431616D-7CG T431616E-7C |
1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM 100万16内存12k × 16Bit的X 2Banks同步DRAM
|
TM Technology, Inc.
Electronic Theatre Controls, Inc.
|
| K4S511632C K4S511632C-KC K4S511632C-L1H K4S511632C |
8M x 16Bit x 4 Banks Synchronous DRAM Data Sheet
DDP 512Mbit SDRAM 12兆内
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
